A monolithic long wavelength photoreceiver using heterojunction bipolar transistors

Abstract

An optoelectronic integrated circuit (OEIC), consisting of a p-i-n photodetector and heterojunction bipolar transistors connected together as a transimpedance photoreceiver, has been fabricated. The monolithic photoreceiver was made from InP/InGaAs-based heterostructures and had a bandwidth of 500 MHz with a transimpedance of 1375 Omega . At a signaling rate of 1 Gb/s, the measured receiver sensitivity was -26.1 dBm at a wavelength of 1.5 mu m. A dynamic range greater than 25 dB and an equivalent input noise current of 11 pA square root Hz were also measured. >