Abstract
A monolithic GaAs optical receiver which includes a photodetector and preamplifier was designed and fabricated using a common 1.0-/spl mu/m GaAs MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 k/spl Omega/. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing. >
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