Abstract
A monolithic data acquisition channel has been fabricated using a double level polysilicon NMOS process. The channel consists of a switched-capacitor filter, a continuous-time active RC filter, and a successive approximation analog-to-digital converter. The IC is in the form of a parts kit for a data acquisition channel so that each functional component can be characterized independently. Stitch bonds are used to connect the elements together to form the complete monolithic channel. Each element is implemented with a symmetric, fully differential structure. The measured dynamic range of the channel is 86.1 dB when using ± 5 V supplies.
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