Abstract
AbstractA five‐stage monolithic Cockcroft‐Walton voltage multiplier is reported which uses metal‐insulator‐metal capacitor and Schottky diode based on AlGaN/GaN heterostructure field‐effect transistor (HFET) structure. The voltage multiplier includes 5 capacitors and 5 Schottky diodes. AlGaN/GaN HFET with L/W = 1 μm/10 μm is used as the Schottky diode, where the gate made of Ni/Au/Ti is used for the anode and the ohmic contact is used for the cathode. The size of the chip is 0.567 mm×0.445 mm. The breakdown voltage of the capacitor is around 40 V and the diode breakdown voltage in reverse direction is more than 100 V. At input AC peak to peak voltage of 20 V under frequency of 10 MHz, the measured output voltage is about 40 V with the output impedance less than 1 MΩ. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
