Abstract
For personal communication systems, the highest possible integration into monolithic technology of all RF functions are desirable. For future mobile communication systems, one of the assigned bands is in the range of 60GHz. In this paper, the design and test of a monolithic power amplifier with 0.15?m PMHFET technology is presented, which is targeted at an output power of 50mW at 62GHz and a minimum gain of 7dB. In order to choose the best FET bias, a nonlinear model for the PMHFETs based on continuous DC and AC measurements (C-model) was derived. To avoid stability problems, a RC feedback network for each device was introduced. For comparison purposes, the amplifier final version was simulated again using a nonlinear model based on pulsed measurements (P-model). Models for the microstrip discontinuities were obtained from EM simulations. Experiments on a 3mm × 4mm chip showed an output power of 16.5dBm at 62GHz, for an input power of 10dBm. A 1dB compression point of 15dBm was encountered.
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