Abstract
This paper presents a 60 GHz balanced low noise amplifier. Compared with single-ended structures, the balanced structure can obtain a better input/output return loss, a lower noise figure (NF), a 3 dB improvement of the 1 dB compression point, a 6 dB improvement of IM3 and a doubled dynamic range. Each single-ended amplifier in this paper uses a four-stage cascade structure to achieve a high gain in broadband. At the operating frequency range of 59–64 GHz, the small signal gain of the balanced amplifier is more than 20 dB. Both the input and output return losses are less than −12 dB. The output 1 dB compression power is 10.5 dBm at 60 GHz. The simulation result for the NF is better than 3.9 dB. The chip is fabricated using a 0.15 μm GaAs pHEMT process with a size of 2.25 × 1.7 mm2.
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