A monohydride high-index silicon surface: Si(114):H-(2×1)

Abstract

We describe the adsorption of H on Si(114)-(2×1) as characterized by scanning tunneling microscopy and first-principles calculations. Like Si(001)—and despite the relative complexity of the (114) structure—a well-ordered, low-defect-density monohydride surface forms at ∼400 °C. Surprisingly, the clean surface reconstruction is essentially maintained on the (2×1) monohydride surface, composed of dimers, rebonded double-layer steps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H-passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons.