Abstract
Computer simulations of the type molecular dynamics (MD) are used to study the effects of a secondary generation of recoils on a silicon stepped surface. Dimers and subsurface atoms are displaced with a low kinetic energy ( E k⩽10 eV) and the evolution of the irradiated region is simulated with classical MD using standard three-body potentials. Two main types of defects have been found. These are vacancies, generated by sputtering of dimers and of second layers atoms, and interstitials due to the displacements of third-layer atoms. The dependence of these defects on the structural properties of the surface and the effects of E k and of the lattice temperature have been analyzed.
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