Abstract
The reactive nucleation of Mg on Ge(100), (111), and (211) surfaces was studied with the molecular beam technique. In this system Mg reacted with the substrate to form a semiconducting germanide Mg2Ge. For incident Mg fluxes of 1012–1013 cm−2 sec−1, the germanide nucleated at substrate temperatures of the order of 350°C. Nucleation of the germanide on Ge(100) occurred at submonolayer Mg coverages indicating an island configuration for critical nuclei of Mg2Ge. A HCP–Mg film could be grown by depositing on substrates held at room temperature. HCP–Mg films of the order of 102–103 monolayers alloyed rapidly at 125°C to form the germanide.
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