Abstract
GaAs/AlAs quantum dot structures have been fabricated by atomic hydrogen-assisted molecular beam epitaxy (MBE). The substrates used were (111)B GaAs, on which tetrahedral-shaped pits surrounded by three equivalent triangular-shaped {111}A side facets have been produced by an anisotropic wet chemical etching. The deposition of GaAs on (111)A facets were decreased as a consequence of growth selectivity under atomic hydrogen irradiation. A high selectivity in the growth between on (111)B and (111)A has been uniquely utilized for the fabrication of quantum dot structures.
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