Abstract
The approach to modeling chemical-mechanical planarization (CMP) based on the notion of the effective filling density, which makes it possible to calculate the thickness distribution of the interlayer dielectric (ILD) on the surface of the VLSI crystal, is considered. The polynomial CMP model previously proposed in [1] is compared to model [2]. The algorithm of modifying the pattern of the VLSI topological layer by the dummy filling features, which was proposed in [3], is described using the proposed polynomial model. The results of model investigations of applying the developed modification algorithm of topological layers by examples of various VLSI types are presented.
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