A modified structure for MOSFET-like carbon nanotube FET

Abstract

In this paper, non-equilibrium Green’s function method is used to investigate the characteristics of carbon nanotube field-effect transistors (CNTFETs). Leakage current resulted from band-to-band tunneling, and ambipolarity behaviors are among the known effects for CNTFET devices. To minimize these phenomena, a modified structure is presented in which density of source and drain in the transistor is reduced in steps while going toward the intrinsic channel. The proposed structure shows a better ambipolar property and less power-delay product at a given I ON/I OFF ratio, and also less delay time at a given I ON compared with the available structure. Also, its other ON- and OFF-state characteristics are almost intact. Afterward, the effect of different factors on the behavior of the device and their optimal values such as channel length changes, chirality, dielectric constant, and gate length changes are investigated.