Abstract
The capacitance-voltage (C-V) technique used to characterize the irradiation response of separation by implantation of oxygen (SIMOX) material was improved and then used in the analysis of the total-dose radiation effects of the silicon on insulator (SOI) capacitors. The capacitor samples were made up by using the etch-back technique to pull off several layers of fluorine ions (F+) implanted and non-implanted SIMOX materials. According to the results of deconvolution of C-V data of those samples, after irradiation, it indicated that the tolerane of SIMOX materials to total dose radiation was improved by F+ ions implanted into the buried SiO2 layer.
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