Abstract
VCSEL (vertical cavity surface emitting laser) is a promising optoelectronic device, but its high manufacturing cost limits its scope of applications. Growing on larger size wafers is an effective way to reduce the cost. However, the growth rate uniformity needs to be optimized to ensure the uniformity of the devices’ performance over the wafers. This paper investigates the factors which influence the growth rate uniformity using an 8 × 6 inch planetary reactor through experiments and simulations. At a carrier gas flow rate of 37 slm, an AsH3 flow rate of 600 sccm, an AsH3 flow rate ratio of 100:500, and a ceiling temperature of 175 °C, the growth rate uniformity of the AlGaAs layer with a relative standard deviation of 0.16%, 1σ, was obtained over the 6-inch wafers. The uniformity of the DBR stop band center and VCSEL quantum well wavelength with standard deviations of 0.142% and 0.023%, 1σ, were received over the 6-inch wafers, respectively. Based on the optimized results, 99.95% of VCSEL devices with wavelengths of 940 ± 5 nm were realized over the 6-inch wafers.
Highlights
The development of metal-organic chemical vapor deposition (MOCVD) technology has contributed to improving the performance of the optoelectronic devices, such as the edge emitting laser (EEL) [1,2], vertical-cavity surface-emitting laser (VCSEL) [3,4], and photovoltaic cell (PVC) [5,6]
The 8 × 6 inch Planetary Reactor was used in this study
The growth rate uniformity is defined by the relative standard deviation over the rotating substrate [7]: n
Summary
The development of metal-organic chemical vapor deposition (MOCVD) technology has contributed to improving the performance of the optoelectronic devices, such as the edge emitting laser (EEL) [1,2], vertical-cavity surface-emitting laser (VCSEL) [3,4], and photovoltaic cell (PVC) [5,6]. When the size of the reactor chamber is further expanded to facilitate higher wafer capacity, more precise control of the depletion profile is required. Coatings 2020, 10, 797 the reactor chamber is further expanded to facilitate higher wafer capacity, more precise control of the depletion profile is required. The hydride gas flowing through the bottom channel acts as an diffuse to the surface due to that its density momentum, resulting utilization efficiency impedance to wafer the growth nutrients diffuseand to the wafer surface due toin itspoor density and momentum, of MO-precursors [14]. MOCVD with a third gas inlet above resulting in poor utilization efficiency of MO-precursors [14] To solve this problem, a new planetary the MO injector was designed hydridechannel species,was which is shown in with a channel third gas inlet above to thesupply.
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