Abstract
The aluminium-induced layer-exchange process allows to grow thin large-grained polycrystalline Si films on foreign substrates. A characteristic feature of these films is the preferential (100) orientation of Si grains, favourable for subsequent epitaxial thickening at low temperatures. In this work, a model based on the preferential nucleation is proposed, which elucidates a possible origin of the preferential (100) orientation and its sensitivity to the preparation and process conditions. The probability of Si nuclei to have respective orientation is attributed to the nucleation barrier, i.e. the critical value of the change of the Gibbs energy during nucleation. The preferential orientation is formed statistically by the nuclei having the lowest nucleation barriers.
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