Abstract
A mechanism of thin film low temperature metal silicide and SiO 2 growth kinetics is presented. The model is based on two fundamental assumptions. (1) There is a limited number n r of low temperature initial reaction centres on the substrate surface. This number depends on the surface structure and is generally smaller than the total number n s of surface atoms. (2) The n r reaction centres determine from the very beginning of the interaction the number n c of easy mass transport channels which in turn determine all the later growth processes. Experimental observations support the presented assumptions and the model can explain qualitatively the observed substrate surface structure-dependent linear-parabolic growth kinetics.
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