Abstract
A realistic model of a front-illuminated n/sup +/-p-p/sup +/ silicon solar cell is developed by solving the current continuity equations for minority carriers in the quasi-neutral regions in steady state, assuming the light in the cell is trapped as a result of multiple reflections at the front and the back of the cell. This model is used to study the effects of the front emitter thickness and doping level and the light trapping on the J-V characteristic and thereby on the open-circuit voltage, short-circuit current density, curve factor, and the efficiency of the cell. A textured cell with an emitter thickness in the range of 0.3-1.0 mu m with its doping approximately=5*10/sup 18 /cm/sup -3/ and the recombination velocities of minority carriers as large as 200 cm/s at the n/sup +/ front surface and 10 cm/s at the back of the p base can exhibit an efficiency in excess of 26% (under AM 1.5 sunlight of 100 mW/cm/sup 2 /intensity) at 25 degrees C if the light reflection losses at the front surface can be made small. >
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