Abstract
A model of carrier density and drain current for monolayer graphene field-effect transistors (GFET) is proposed in this paper. In general, the carrier density is the numerical integration of the density of states (DOS) and Fermi-Dirac distribution. To avoid numerical solution, a physical-based and analytical calculation for carrier density and quantum capacitance is presented. Due to the intrinsic physical mechanism, the interface trap density is taken into account in the drain current model of GFET. Through the comparisons between model results and numerical iterations or experimental data, the validity of the proposed models is supported. The clear physical conception and simplicity of algorithm make our scheme suitable for compact modelling.
Highlights
INTRODUCTIONThe device feature size has entered into the nano-scale. The traditional devices are no longer suitable for future ICs due to their limitations for scaling down
At present, the device feature size has entered into the nano-scale
In this paper, based on the density of states (DOS) solved by the potential fluctuation function of the exponential distribution in Ref. 12, we use the new mathematical approximation to calculate the analytical solution of the carrier density based on Fermi statistics, which yield more physical-based and straight-forward results
Summary
The device feature size has entered into the nano-scale. The traditional devices are no longer suitable for future ICs due to their limitations for scaling down. As the thinnest two-dimensional atomic crystal material networked by sp hybrid carbon atoms, has highperformance characteristics, such as ambipolar behavior, high carrier mobility, and high current density.. As the thinnest two-dimensional atomic crystal material networked by sp hybrid carbon atoms, has highperformance characteristics, such as ambipolar behavior, high carrier mobility, and high current density.1 Based on these unique physical properties of graphene transistors, many studies have shown that graphene has extraordinary applications in flexible displays, sensors, and high-frequency electronic devices in the past decade, especially for analog and radio frequency (RF) devices applications.. In this paper, based on the DOS solved by the potential fluctuation function of the exponential distribution in Ref. 12, we use the new mathematical approximation to calculate the analytical solution of the carrier density based on Fermi statistics, which yield more physical-based and straight-forward results. Due to the presence of interface trap charges, the contribution of interface trap charges is taken into account in the closed-form solutions
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