Abstract
A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analysed and discussed. The effect of an inhomogeneous non-stationary temperature field and mechanical quasi-static and dynamic stress fields on radiation defect profiles is also examined. Spatial profiles of the charge carrier concentration and the implanted ion distribution are calculated and a comparison made with experimental profiles obtained for the semiconductor compound Hg1−xCdxTe. The results show that the defect concentration profiles near the surface are reduced with a large rate of recombination between vacancy and interstitial atoms.
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