A model for the kinetics of constant current plasma anodization process

Abstract

In this paper the mathematical-physical model of the DC constant current plasma anodization process is presented. The validity of the model is checked by comparing the results of theoretical calculations with the experimentally obtained growth kinetics data for silicon anodization. The obtained (after the fitting procedure of two physical parameters) agreement between the theoretical and experimental results proves that this model can be successfully used to describe the kinetics of the plasma anodization process under constant current conditions in the whole examined range of silicon oxide thicknesses, i.e. up to 15 nm.