A model for the growth of anomalous polytype structures in vapour grown SiC

Abstract

A number of polytype structures observed in vapour grown SiC crystals have a unit-cell which is an integral multiple of the unit-cell of the basic 6H, 15R or 4H structure. The growth of such anomalous structures cannot be understood in terms of spiral growth round a single screw dislocation in a basic matrix. However many of these polytype crystals display a single growth spiral on their (0001) face indicating that they have resulted from spiral growth round a single screw dislocation. It is shown that this anomaly can be resolved if the basic matrix is assumed to contain stacking faults near the surface at the time of the origin of the screw dislocation ledge. This possibility, overlooked in the earlier deduction of polytype structures, must be taken into consideration since vapour grown SiC crystals frequently contain a high concentration of random stacking faults, producing continuous streaks on their X-ray diffraction photographs. The most probable fault configurations that can occur in 6H, 15R and 4H structures of SiC have been deduced from a calculation of their stacking fault energy. These fault configurations are then considered to lie at different distances from the surface at the time of the origin of a screw dislocation ledge. Such a faulted ledge gives rise to polytype structures during subsequent spiral growth even if the screw dislocation has an integral Burgers vector. The most probable series of polytype structures that can result from such a faulted matrix model are deduced. It is shown that nearly all the polytype structures of SiC hitherto regarded as anomalous (such as 36H, 54H, 66H, 45R, 90R etc.) are among the expected structures and there is no need to postulate a complicated configuration of cooperating dislocations to account for their growth.