Abstract
An electronic model based on the creation of an impurity band whose Fermi level is pinned to the middle of the Mott-Hubbard (M-H) gap is proposed. Increasing the doping causes more electron states to be transferred from the M-H bands to the impurity band and also increases the transfer integral for conduction electrons.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
