A model for the electric conduction in metal/poly-TiO2/metal structure

Abstract

Intensely studied memristive devices have M′/MO/M″ structures, wherein MO is a nanometer-sized metal oxide crystallite sandwiched between the M′ and M″ metal electrodes. The most widely used oxide for this purpose is TiO2 and the electrodes are of noble metals such as platinum, silver, and gold. The memristive features of the device is believed to originate from the motion of the ionized oxygen vacancies within the oxide crystal. The operation of the device is further complicated by the motion of the mobile cations originating from the metal electrodes. The complexity of the device performance increases further when the noble metal electrodes form Schottky barriers at their junctions with TiO2, as the conduction takes place through these energy barriers. In a recent publication, the authors have shown that, owing to the ohmicity of the Ti/TiO2 junctions, electronic observations on the devices with Ti/TiO2/Ti structure can be easier to model. The presented model clarified that in a Ti/poly-TiO2/Ti structure, the ionic motion and the electronic conduction take place on the TiO2 grain surfaces and grain boundaries rather than the grain interiors. Here, we show that the suggested model has important implications for chemical sensor design and fabrication.