Abstract
A model for bipolar mechanism, initiated in some MESFETs during a radiation transient, is presented. It differs from other models in its postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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