Abstract
The model presented combines a detailed determination of the temperature increase by pulsed laser irradiation of a solid with calculations of thermodesorption in the presence of a gas phase. It is applied to the etching of silicon dioxide by a CO 2 laser and fluorocontaining compounds. The applicability of some usual approximations (surface heat source, temperature-independent properties of the solid) and the effect of various parameters of the laser pulse, of the surface complexes and of the gas phase on the surface temperature and the desorbed amount are discussed. Some indications are given on possible thermal processes during the etching of silicon by CO 2 laser irradiation in the presence of XeF 2.
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