Abstract
A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed.
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