Abstract
We propose a new model for alloy scattering in semiconductor alloys in which the alloy scattering potential is allowed to have an energy dependence which is calculated from the band structures of the components. At low electric fields this model reduces to the conventional model based on electronegativity differences of the components. At high fields where the electron distribution function is shifted to higher electron energies, our model leads to reduced alloy scattering. This in turn leads to a reduction in the threshold fields and an increase in peak velocities. This model is applied to In0.53Ga0.47As and the results thus obtained are compared with the available experimental data.
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