Abstract
A comprehensive model for graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) Al/sub x/Ga/sub 1-x/As diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain-vs.-current density data for different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, and the high-gain kink in T/sub 0/ versus temperature is qualitatively explained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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