A model for calculating secondary and backscattered electron yields

Abstract

SUMMARYImages in the scanning electron microscope (SEM) are formed from both low‐energy secondary, and high‐energy backscattered, electrons. The quantitative interpretation of SEM images therefore requires a model which can predict the magnitude of both of these signal components for a specimen whose geometry and chemistry is known. It is shown that the combination of a simple electron diffusion model with a Monte Carlo trajectory simulation allows both yields to be calculated, simultaneously, with good accuracy. Data, such as the magnitude and energy of the maximum secondary yield, the secondary variation with tilt, and the contribution of backscattered electrons to the secondary yield coefficient, computed from this model are in excellent agreement with experimental data.