Abstract
The physical mechanism for the band gap evolution of the strained InxGa1−xNySbzAs1−y−z alloy is investigated. It is found that InxGa1−xNy SbzAs1−y−z alloy with small N and Sb contents can be considered as an alloy formed by adding N and Sb atoms in the host material InxGa1−xAs. Under this condition, the band gap evolution of InxGa1−xNySbzAs1−y−z is due to three factors. One is the intraband coupling interactions within the conduction band and separately within the valence band of the host material, another is the coupling interaction between the Sb level and the Г valence band maximum of the host material, and the other is the coupling interaction between the N level and the Г conduction band minimum of the host material. Based on the physical mechanism for the band gap evolution of InxGa1−xNySbzAs1−y−z, a model is developed. The model can describe the band gap energy of the strained InxGa1−xNySbzAs1−y−z alloy well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
