Abstract
MOCVD growth of GaAs frequently is accomplished using trimethylgallium and arsine. Although these materials are presently used safely worldwide in a research environment, their hazardous nature is an important consideration in the application of MOCVD to production. This paper describes a MOCVD reactor safety-interlock and automatic shutdown system now being evaluated on a research reactor for its suitability in a production environment. Some specific features employed are fire detection, reactor overpressure prevention, and toxic gas exposure control. This paper will also discuss the technique used to remove As and AsH 3 from the reactor exhaust.
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