A mmWave Folded Substrate Integrated Waveguide in a 130-nm CMOS Process

Abstract

A miniaturized millimeter-wave substrate integrated waveguide (SIW) in IBM 130-nm digital CMOS process is presented in this paper. The footprint of the interconnect is reduced compared with previous works using the folding technique. A current-loop transition structure is proposed in this paper that is built inside the SIW interconnect and excites its TE10 mode with minimal area overhead. A simulation-based comparison of T-FSIW and other planar transmission line structures reveals that the T-FSIW interconnect shows a much higher resonant quality factor. A prototype waveguide is designed and fabricated to operate with a cutoff frequency of 175 GHz. Furthermore, the current-loop excitation is optimized for the frequency range of 180–220 GHz. Simulation and experimental data are used to confirm the proposed interconnect approach.