Abstract
This paper describes the development of a technology that incorporates low voltage CMOS and high voltage JFET and DMOS transistors on the same chip. The fabrication sequence is based on a metal gate CMOS process. The influence of the process variables and trade-offs in the characteristics of the devices have been discussed. The successful application of the technology to a thermal printer head driver circuit has been demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
