Abstract
In this work, the nucleation surface of a polycrystalline diamond film was used for the first time to fabricate a MISFET structure using standard photolithographic procedures, with a channel length of 100 μm. The resulting structure works as an enhancement-type p-type MOSFET. The I ON/ I OFF ratio is about three orders of magnitude. The saturation of the current is clearly observed, with I DS currents of about 20 nA for V DS of 20 V. The smoothness of the nucleation surface allows a higher control of the electrodes, as well as their size decrease. The results show that, even though in an early stage, this investigation opens the door for a new generation of devices built on free-standing diamond films.
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