Abstract
A miniaturized sensor for ammonium detection based on the integration of both ammonium and reference FETs in a single chip, was fabricated by including nonactin in a plasticized PVC membrane deposited on the surface of the NH 4 + ion-sensitive field effect transistor (ISFET) and by depositing a plasticized PVC membrane on the reference (non-sensitive) FET. A differential measurement mode between both FETs was used, this mode of measurement allowed to reduce interferences of Na + and K + ions, the effect of ionic strength and of temperature. The sensitivity of the ammonium detection was around 30 mV/pNH 4 + and the detection limit 2 × 10 −6M.
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