Abstract
A millimeter-wave resistive (intermediate frequency) FET mixer design that provides down-conversion to low IF (intermediate frequency) frequencies with low 1/f noise is described. The single FET unbalanced mixer has a double sideband noise figure of 7.5 dB with a conversion loss of 9 dB at an LO (local oscillators) drive level of 9 dBm. An RF to LO isolation of 15 dB is achieved through the use of a resonant loop from drain to gate. The design allows downconversion to low IF frequencies using a FET-compatible process with a small chip size. A comparison of MESFET and HEMT (high electron mobility transistor) versions of the mixer shows that the 1/f noise level is higher in the HEMT mixer. >
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
