Abstract
A millimeter wave active load-pull measurement system for large signal characterization of millimeter wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. The advantages of the proposed measurement system are summarized. Large signal characterization of a GaAs FET at 28 GHz in terms of constant absorbed power contours, constant operating gain contours, and constant DC drain current contours in the complex Gamma /sub L/ plane are presented. >
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