Abstract
Microwave biasing techniques were employed to construct a sensitive, wide bandwidth GaAs submillimeter detection system. Optimum operating conditions and the performance characteristics were determined for three different microwave receiver systems. An NEP of 3.2 × 10 −10W/Hz 1 2 and a responsivity of 3 × 10 3 V/W was achieved. The bandwidth limitation was found to be the microwave cavity bandwidth of 11 MHz. For comparison, a d.c. biased GaAs detection system was constructed and its performance characteristics evaluated.
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