Abstract
The InSb + 1 at % Ni + 1 at % Mn alloy was studied by optical microscopy and scanning electron microscopy. A Heusler phase based on NiMnSb in the form of microinclusions on InSb dislocations was detected. The chemical composition of the microinclusions on dislocation pile-ups ranges from Ni1.1MnSb to Ni1.2MnSb, and that on individual dislocations is close to Ni1.1MnSb. However, the synthesis gives rise to bulk structural defects in the form of micropores and to elastic deformations around them, which are the main obstacles to the creation of a coherent material with unhindered movement of polarized electrons throughout the volume.
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