Abstract
This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs.
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