A micromachining technique for a thin silicon membrane using merged epitaxial lateral overgrowth of silicon and SiO/sub 2/ for an etch-stop

Abstract

A micromachining technology using merged epitaxial lateral overgrowth (MELO) of silicon, combined with SiO/sub 2/ as an etch-stop, was developed. When epitaxial lateral overgrowth (ELO) silicon merges on top of SiO/sub 2/ islands, it forms a local silicon-on-insulator (SOI) film which can be transformed into a thin silicon diaphragm needed for micromechanical sensors. The SiO/sub 2/ islands then act as a near-perfect etch-stop during back etching due to its negligible etch rate in KOH- or ethylenediamine-based solution. This technique permits the formation of both transducers and transistor structures in the same film since it does not require a highly doped film for the etch-stop. The diaphragm thickness is controlled by the epitaxial silicon growth rate ( approximately=0.1 mu m/min) rather than by traditional etching techniques. A single-crystal silicon diaphragm 9 mu m thick and 250 mu m*1000 mu m was realized. Diodes fabricated in the MELO silicon showed characteristics similar to those in bulk silicon, including reverse bias leakage currents. >