Abstract
A thin film Peltier heat pump was fabricated using standard semiconductor patterning and etching techniques. The device consisted of chrome-gold and bismuth telluride metallization to form the thermoelectric junctions. The device achieved a maximum heat pumping rate of -30 /spl mu/W at a current of 1.03 mA when operating in the cooling mode. These values were less than what was expected due to excessive resistance in the chrome-gold and bismuth-telluride metallization. Thermal isolation of the Peltier heat pump on a 1.8 /spl mu/m thick oxide bridge was used to enhance device performance. The Peltier device succeeded in lowering the temperature of the oxide bridge 1.5/spl deg/C below ambient. The initial thermal response time in the cooling mode was 10 ms//spl deg/C, with a thermal relaxation time of 9 ms//spl deg/C.
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