Abstract
We provide a high throughput method of performing optical modulation spectroscopy, such as photoreflectance or other spectroscopy techniques which include photoluminescence on a micrometric resolution scale of the order of 10 μm. The spectroscopic technique is designed for strain induced by process in silicon wafers. The optical system is optimized using a polarizing beamsplitter in conjunction with a single Fresnel rhomb for the provision of an optimum separation of the reflected probe beam with minimal optical losses. In addition, a rapid detection system is used that allows the spectrum to be acquired within few seconds.
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