Abstract
All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this paper, the memristor with construction of Au/CsPbBr3/FTO, Au/CsPbBr3/ZnO/FTO and Au/ZnO/CsPbBr3/FTO were manufactured by one-step spin-coating approach to observe representative bipolar resistance switching behaviors in different construction of resistance random access memory devices. Results show that the memristor based on ZnO/CsPbBr3 heterojunction having excellent resistance switching effect with low resetting, setting voltages and and high environmental stability. Moreover, a model of filaments through the CsPbBr3 layer was raised to interpret the resistive switching effect.
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