Abstract
Flash lamp annealing (FLA) of micrometre-order thick amorphous silicon (a-Si) films can induce explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. We develop multipulse FLA system, which emits a quasi-millisecond pulse consisting of a number of subpulses. The emission frequency of the subpulses can be systematically controlled, and the emission of subpulses leads to the periodic modulation of the temperature of a Si film and the resulting formation of macroscopic stripe patterns. The relationship between a subpulse emission frequency and the width of the macroscopic stripe patterns yields EC velocity. Two kinds of EC modes can be observed, depending on the methods of precursor a-Si deposition and (or) a-Si film thickness.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
