Abstract
Due to the microloading effect, an overetch in through wafer etchings by DRIE has to be taken into account in the fabrication of glass-silicon structures, which results in damages of the silicon surfaces exposed to an ion bombardment. This paper reports on a method, in which a metal layer located on the glass surface and electrically connected with the silicon substrate is used. Even though structures are overetched for a long time, the silicon surfaces remain intact. The results show interdependency between the position of the metal layer on the glass surface and the gap separating the silicon and glass surfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
