Abstract
A method to estimate the local partial pressures and temperature during low pressure chemical vapor deposition (LPCVD) proceses using film profile data is demonstrated using the chemistry of blanket tungsten deposition by the hydrogen reduction of tungsten hexafluoride. EVREST, the computer program which performs the estimates, uses EVOLVE, a physically based process simulator for ballistic transport and heterogeneous reactions in features on patterned wafers, to compute film profiles for a given set of deposition conditions. In order to validate the estimation method and to demonstrate EVREST, test calculations are performed using film profiles generated by EVOLVE instead of experimental scanning electron microscopy cross-sections. Calculated films profiles are compared with the generated film profiles (the data) and the simulated deposition conditions are adjusted using an algorithm based on Marquardt's method to minimize the sum of squared differences between points on the calculated and generated profiles. Test calculations confirm that film profiles in more than one feature can be used to improve the reliability of the partial pressure and temperature estimates.
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