Abstract
High temperature application and long-term reliability are the future development trends of IGBT (insulated gate bipolar transistor) module. This article proposes a 1200-V/50-A IGBT module using the current-assisted sintered nanosilver as die attachment and high-temperature solder as substrate attachment. We measured and compared the electrical and the thermal characteristics, and the reliability of the proposed IGBT modules with those of the commercial IGBT module of the same level. The proposed IGBT modules show consistency with commercial IGBT module in electrical performance, which also proved the feasibility of the current-assisted sintering. The thermal impedance of the proposed IGBT module decreased by 17.2% compared with that of the commercial one. And, the thermal shock test shows that higher resistance to thermomechanical fatigue can be successfully achieved.
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