Abstract
Some coated conductor applications require a YBCO layer at least 5 /spl mu/m thick with high J/sub c/. The growth of thick c-axis oriented epitaxial layers using the barium fluoride ex-situ technology is not always possible. Films over 3 /spl mu/m thick have more undesirable a-oriented and random grains than thinner ones. We present an analysis of thick film nucleation and conclude that thick precursor layers impede out-diffusion of the ex-situ reaction product, HF. High impedance for HF diffusion results in large variations of the chemical potential of the growth reaction and disruption of the nucleation process. We conclude that a solution for c-axis growth is control of the precursor permeability. A method is described for controlling the permeability of precursor layers. Using this technique we were able to grow c-axis oriented 5-/spl mu/m thick films on oxide-buffered Ni tape with J/sub c/(0 T) = 4 /spl times/ 10/sup 5/ A/cm/sup 2/ and J/sub c/(1 T) = 8 /spl times/ 10/sup 4/ A/cm/sup 2/.
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