Abstract
Methods of using a combination of electromagnetic resonance modes including surface plasmons and Fabry–Perot cavity resonances and other optical modes including Wood–Rayleigh anomalies and diffraction to enhance the performance of metal–semiconductor–metal photodetectors (MSM-PDs) fabricated on silicon-on-insulator (SOI) substrates are described. The characteristics of these optical modes are briefly described and their proper use in SOI MSM-PDs is described in detail. Three algorithms that model the electromagnetic field produced by the incident beam, the quasi-static electric field produced by the applied bias, and the charge carrier motion, recombination and induced photocurrent are integrated together in a time-dependent way to accurately calculate the bandwidth and responsivity for a series of optical pulses. By using a combination of optical modes, a structure with theoretical values of 50 GHz bandwidth and 0.17 A W−1 responsivity is designed. Other structures using different combinations of optical modes are described.
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